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1 Hysteresis eects All the I SD-V G plots of our devices were accompanied by hysteresis. Fig. S1 (a) shows the channel current of Sample C as a function of gate voltage V G for V SD = 5 V. An increase in V G to 40 V is accompanied by monotonic increase in I SD from ∼1 nA to ∼100 µA. However, with decreasing V G from 40 V to zero (sequence 6-7-8), the(More)
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