P. Sardin

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After a brief review of light emission in field effect transistors, we extract some electrical and physical parameters linked to the emission of photons such as V/sub DD/ and channel length. Using 120 nm technology structures (nMOS, pMOS, inverters, etc.) we compare emissions with the following detectors: CCD, MCT for static emission, PICA, SiAPD and SSPD(More)
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