P. S. Smertenko

  • Citations Per Year
Learn More
This paper reports on the ZnO film structures obtained by MOCVD method on Si substrates. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.
This paper reports on the Ag/HfO<inf>2</inf>/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO<inf>2</inf> layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO<inf>2</inf> capping layer for the ZnO-based(More)
This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 &#x00B0;C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The(More)
We present here results of spectral (UV-Vis, PL), morphological (XRD, SEM) and voltammetric (I-V) characterizations of electrochemically deposited nanostructured ZnO layers at transparent ITO electrodes. For the first time the deposition was run in a presence of tetraalkylam-monium hydroxides (TAAHs) as organic templates for comparison with the known one(More)
  • 1