P. P. J. Haazen

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Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall(More)
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Materials with perpendicular magnetic anisotropy (PMA) provide an excellent platform for a novel class of memory and logic devices, e.g. exploiting transport and control of domain walls in ferromagnetic nanowires. In this paper we review some of our recent progress in this field, addressing control of domain wall motion by ‘non-magnetic’ means, i.e. not(More)
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