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This paper presents a single chip, superhetrodyne receiver IC capable of supporting dual-band, tri-mode handsets. Supported standards include W-CDMA, CDMA (IS-98-C) and AMPS. The receiver consists of multistep gain LNAs, high performance RF mixers with adjustable linearity, a variable gain amplifier, on chip VCO cores, and an IQ downconverter. The IC is(More)
This work presents a cellular receiver capable of receiving three simultaneous channels with an aggregate bandwidth of 60 MHz, enabling a 300 Mbps downlink rate. The receiver has 16 RF LNA ports covering the cellular bands within the 572-2700 MHz frequency range. It supports LTE-advanced Rel-12 Cat6, HSPA+ Rel-11, TD-SCDMA Rel-9, and GSM/EDGE Rel-9. The 40(More)
Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining increasing popularity for RF circuits in wireless applications due to high performance, low cost, high yield and higher levels of integration with mixed signal and digital CMOS circuits. Four test circuits were designed and fabricated in Conexant's 0.18 /spl mu/m SiGe BiCMOS process(More)
A highly integrated transmitter IC fabricated in Conexant's 0.35 um SiGe BiCMOS process and packaged in a 6 mm /spl times/ 6 mm Land Grid Array (LGA) package provides dual band/tri-mode transmitter functionality in a CDMA handset meeting TIA/EIA 98-D specifications. This chip upconverts the I/Q baseband signals to RF in two stages and delivers the amplified(More)
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