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The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We(More)
In this work, we have investigated the effect of Antimony counter-doping in channel region of 4H-SiC MOSFETs with moderately doped p-body, relevant for power applications. Using this process, improved sub-threshold slope and high channel mobility have been achieved in conjunction with high threshold voltage. Our results indicate that the improvement in(More)
Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It(More)
The high flux and density of x-rays produced at synchrotrons provide the microelectronics industry with a powerful probe of the structure and behavior of a wide array of solid materials that are being developed for use in devices of the future. They also are of great use in determining why currently-used materials and processes sometimes fail. This paper(More)
Epitaxially grown lattice mismatched semiconductor structures are increasingly important for microelectronic and optoelectronic applications. Recently, a great deal of research has been done on strain relaxation mechanisms in lattice mismatched epitaxial films. Here we describe two high resolution x-ray diffraction experiments performed to study strain(More)
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