P. Litzenberg

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A pseudomorphic high-electron mobility transistor (pHEMT) technology for highly integrated wireless components is presented. The technology utilizes 0.5-/spl mu/m gate length, double recess enhancement- and depletion-mode GaAs/AlGaAs/InGaAs transistors. The nominal E-mode pinch-off voltage is +350 mV with IMAX and IDSS of 290 and 0.0005 mA/mm, respectively,(More)
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