P. L. Cheang

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A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron-and hole-initiated multiplication in thin InP p + –i–n + diodes with a range of multiplication lengths of w = 0.1 and 0.24 lm. This model predicts a reduction in excess noise factor for both(More)
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