P. K. Sundararajan

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and HBT-N, respectively. This data clearly shows that the new process with SiN protection wall is working properly. Consequently, the base resistance, R b , is reduced by 35% and maximum oscillation frequency, f max , is enhanced by 30% (from 162 GHz to 208 GHz). Since the base resistance does not affect the transit time, f T s of the two HBTs are quite(More)
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