P. J. McNally

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As a result of European Union and other legislation lead/tin (Pb/Sn) solder bumps are being phased out of integrated circuit and high density/power semiconductor device production. One possible replacement is the use of nickel bumps with an electroless nickel under bump metallization (UBM) layer built on a silicon substrate. In this study Ni(P) based films(More)
Reliability issues as a consequence of thermal/mechanical stresses created during packaging processes have been the main obstacle towards the realisation of high volume 3D Integrated Circuit (IC) integration technology for future microelectronics. However, there is no compelling laboratory-based metrology that can non-destructively measure or image(More)
Crystal distortions modify the propagation of x-rays in single crystal materials, and x-ray topography can be used to record these modifications on a film thus providing images of the distributions and nature of defects, dislocations, strains, precipitates, etc. in semiconductors. Small variations of contrast, which often need to be analysed can be rendered(More)
Crystal distortions modify the propagation of x-rays in single crystal materials, and x-ray topography can be used to record these modifications on a recording medium (e.g. film) thus providing images of the distributions and nature of defects, dislocations, strains, precipitates, etc. in semiconductors [1,2]. Analysis of the topographs is often difficult(More)
Crystal distortions modify the propagation of X-rays in single crystal materials, and X-ray topography can be used to record these modifications on a film thus providing images of the distributions and nature of defects, dislocations, strains, precipitates, etc. in semiconductors. Small variations of contrast, which often need to be analysed can be rendered(More)
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