P. F. Guo

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In this work, different HfO X-based RRAM stacks, involving n +-Si, NiSi or Ni(Ge 1-X Si X) bottom electrode which can be easily integrated with source/drain of a transistor, are systematically investigated. It has been found that the involvement of Ni (or NiOx formed) in the stack is very beneficial to good switching properties. More importantly, RESET(More)
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