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This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further(More)
This work describes the first demonstration of an InP DHBT MMIC Doherty amplifier at K-band. When combined with InP DHBTs, the Doherty amplifier achieves a record linear PAE of 20% under a strict C/IM3 linearity ratio of 30 dBc while producing a Pout of 20.1 dBm. This benchmarks 3 dB greater Pout and 4% higher linear PAE than achieved with a PHEMT MMIC(More)
We present a computing framework for Monte Carlo simulation of radiation transport. In conformity with our belief that Monte Carlo studies should be anchored to physics but not to any particular code, we have enabled different Monte Carlo codes in this environment. The framework embraces the EGSnrc family, FLUKA, MCNP/MCNPX, GEANT4 and PENELOPE; dedicated(More)
High speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBT) are the preferred approach for systems operating at clock frequencies of 40 GHz and above. In this paper we(More)
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads(More)
Factors affecting reliability performance of GaAs PHEMT Schottky diodes for mixer applications were investigated: the total gate periphery, gate feed cross-sectional area, and the operating gate current. In addition, an elevated two-temperature lifetest at T/sub ambient/ of 265/spl deg/C and 280/spl deg/C was performed to reveal the degradation mechanism of(More)
We present a state-of-the art 0.07 um T-gate InP HEMT MMIC power amplifier at G-band frequencies. The fixtured amplifier MMIC exhibits greater than 20 mW output power at 175-191 GHz with a peak power of 25 mW output power at 184 GHz. The power density of the output stage is greater than 150 mW/mm and power added efficiency was 9.5%. We believe this(More)
Current microwave systems are constructed by integrating a large number of single technology components into a final product due to the limitations of any single transistor technology across all functions and metrics, thereby increasing cost and size of a given system. In this paper, we present a fabrication process using Molecular Beam Epitaxy (MBE)(More)
An InP-based integrated HBT amplifier with PNP active load was demonstrated for the first time using complementary HBT technology (CRBT). Selective molecular beam epitaxy (MBE) regrowth was employed and a merged processing technology was developed for the monolithic integration of InP-based NPN and PNP HBTs on the same chip. The availability of PNP devices(More)