P. C. Juan

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In this work, we study the effects of rapid thermal annealing (RTA) on HfO<inf>2</inf> and HfSiO<inf>x</inf> gate dielectrics. The film electrical characteristics, TDDB reliability, breakdown characteristics and mechanism, and the optimum temperature of N<inf>2</inf> RTA treatment were investigated. We also propose a model to explain breakdown mechanism and(More)
In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on(More)
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