P.A. Dal Fabbro

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An implementation of a dynamic supply RF power amplifier (PA) in 0.11mum CMOS technology occupying a total area of 1.35mm<sup>2</sup> is presented. Two-tone measurement results at 2.4 and 5.2GHz show that the system can deliver over 16dBm linear output power with efficiencies of 22.7% and 12.6%, respectively. Compared to constant supply operation, besides(More)
In this paper we present an RF PA employing an output impedance matching network of the pi-type, where an inductor is variable. In order to implement this tunable inductor, the coupled-inductor technique [1] is used. Although other techniques for inductor tuning exist, like those using active [2] and MEMS inductors, and p-i-n diodes [3], the(More)
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