Ozhan Koybasi

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We have systematically studied NMOSFETs, MOSCAPs, and the interfacial chemistry on GaAs (100), (110), (111)A and (111)B-four different crystalline surfaces with direct ALD Al2O3. We found that a much higher drain current on GaAs(111)A NMOSFET can be achieved compared to that obtained on the other 3 surfaces. Also, the results of MOSCAPs and the interfacial(More)
We present the results of our recent efforts to develop novel ionizing radiation sensors based on the nanomaterial graphene. Graphene used in the field effect transistor architecture could be employed to detect the radiation-induced charge carriers produced in undoped semiconductor absorber substrates, even without the need for charge collection. The(More)
We report the experimental demonstration of deepsubmicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100–200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200–130-nm-long gates exhibit drain currents of 232–440 μA/μm and(More)
The Super-LHC upgrade puts strong demands on the radiation hardness of the innermost tracking detectors of the CMS, which cannot be fulfilled with any conventional planar detector design. The so-called 3D detector architectures, which feature columnar electrodes passing through the substrate thickness, are under investigation as a potential solution for the(More)
We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of using an existing three level trap model for p-type FZ silicon. The post-irradiation performance improvement of guard rings with floating field(More)
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