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  • Osamu Sugiura, A. G. Dentai, C.H. Joyner, Sethumadhavan Chandrasekhar, J.c. Campbell
  • Chemistry
  • IEEE Electron Device Letters
  • 1988 (First Published: 1 May 1988)
  • By inserting a thin n-InP layer between the p/sup +/-InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11000,Continue Reading