Recent advances in fluorescence microscopy have enabled spatial resolution below the diffraction limit by localizing multiple temporally or spectrally distinguishable fluorophores. Here, we introduce a super-resolution technique that deterministically controls the brightness of uniquely addressable, photostable emitters. We modulate the fluorescence… (More)
We investigate the aerobic oxidation of high-pressure, high-temperature nanodiamonds (5-50 nm dimensions) using a combination of carbon and oxygen K-edge X-ray absorption, wavelength-dependent X-ray photoelectron, and vibrational spectroscopies. Oxidation at 575 °C for 2 h eliminates graphitic carbon contamination (>98%) and produces nanocrystals with… (More)
We demonstrate Purcell enhancement of single NV centers in L3 photonic crystal cavities made from high-purity single-crystal diamond. Furthermore, NV centers were created using an implantation mask in the cavity high field region.
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Imaging micro-Raman spectroscopy is used to investigate the materials physics of radiation damage in congruent LiNbO 3 as a result of high-energy (~MeV) He + irradiation. This study uses a scanning confocal microscope for high-resolution three-dimensional micro-Raman imaging along with reflection optical microscopy (OM), and scanning electron microscopy… (More)
The negatively charged nitrogen vacancy (NV(-)) center in diamond has attracted strong interest for a wide range of sensing and quantum information processing applications. To this end, recent work has focused on controlling the NV charge state, whose stability strongly depends on its electrostatic environment. Here, we demonstrate that the charge state and… (More)
We present the fabrication of nitrogen-vacancy (NV) spin chains by implantation through a silicon mask on diamond. A minimum implantation aperture width of 5 nm is produced. Super-resolution measurements reveal NV lines 26 nm wide and minimal NV-pitch of 8 nm.
A triangular nanobeam architecture for a bulk-diamond quantum photonic networks based on silicon masking and angular etching is proposed and implemented. Cavities with Q>3×10<sup>3</sup> are demonstrated. S-bent interconnects for realizing a mm-scale network are introduced.
We demonstrate an over-80-fold enhancement of an NV's zero-phonon line emission inside cavity in the Purcell regime within a high-purity, electronic-grade diamond substrate. This system is a promising building block for quantum networks.