Onofrio Pirrotta

Publications14
h-index10
Citations393
Highly Influential Citations11
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Experimental and theoretical study of electrode effects in HfO2 based RRAM
In this work, the impact of Ti electrodes on the electrical behaviour of HfO2-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated… Expand
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Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling
In this work we investigate in detail the effects of metal electrodes on the retention performances of HfOx RRAM devices. Motivated by our experimental data, we employ physics-based RRAM modeling and… Expand
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Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently… Expand
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Controlling uniformity of RRAM characteristics through the forming process
The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all… Expand
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Microscopic understanding and modeling of HfO2 RRAM device physics
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with… Expand
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Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs
TLDR
This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. Expand
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Interface Engineering of Ag-${\rm GeS}_{2}$ -Based Conductive Bridge RAM for Reconfigurable Logic Applications
In this paper, we show performance and reliability improvement of Ag- GeS2-based conductive bridge RAM (CBRAM) devices by addition of a 2-nm-thick HfO2 layer between the electrolyte and the W bottom… Expand
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Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
We investigate the role of grains and grain boundaries (GBs) in the electron transport through poly-crystalline HfO2 by means of conductive atomic force microscopy (CAFM) measurements and… Expand
  • 48
A Novel Electronic Nose as Adaptable Device to Judge Microbiological Quality and Safety in Foodstuff
This paper presents different applications, in various foodstuffs, by a novel electronic nose (EN) based on a mixed metal oxide sensors array composed of thin films as well as nanowires. The… Expand
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Progresses in Modeling HfOx RRAM Operations and Variability
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