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- Carlo Cagli, Julien Buckley, +30 authors Barbara De Salvo
- International Electron Devices Meeting
- 2011
In this work, the impact of Ti electrodes on the electrical behaviour of HfO2-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated… (More)
- Andrea Padovani, Luca Larcher, Onofrio Pirrotta, Luca Vandelli, Gennadi Bersuker
- IEEE Transactions on Electron Devices
- 2015
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently… (More)
- A. H. Kalantarian, Gennadi Bersuker, +8 authors P. D. Kirsch
- IEEE International Reliability Physics Symposium…
- 2012
The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all… (More)
- Luca Larcher, A. Padovani, Onofrio Pirrotta, Luca Vandelli, Gennadi Bersuker
- International Electron Devices Meeting
- 2012
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with… (More)
- T. Cabout, Luca Perniola, +16 authors C. Muller
- 5th IEEE International Memory Workshop
- 2013
This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data… (More)
- Giorgio Palma, Elisa Vianello, +9 authors Barbara De Salvo
- IEEE Transactions on Electron Devices
- 2014
In this paper, we show performance and reliability improvement of Ag- GeS2-based conductive bridge RAM (CBRAM) devices by addition of a 2-nm-thick HfO2 layer between the electrolyte and the W bottom… (More)
- Onofrio Pirrotta, Luca Larcher, +4 authors Gennadi Bersuker
- 2013
We investigate the role of grains and grain boundaries (GBs) in the electron transport through poly-crystalline HfO2 by means of conductive atomic force microscopy (CAFM) measurements and… (More)
A Novel Electronic Nose as Adaptable Device to Judge Microbiological Quality and Safety in Foodstuff
- Veronica Sberveglieri, Estefania Nunez Carmona, +4 authors Andrea Pulvirenti
- BioMed research international
- 2014
This paper presents different applications, in various foodstuffs, by a novel electronic nose (EN) based on a mixed metal oxide sensors array composed of thin films as well as nanowires. The… (More)
- Boubacar Traore, Kaiqi Xue, +8 authors Yoshio Nishi
- IEEE International Reliability Physics Symposium…
- 2013
In this work we investigate in detail the effects of metal electrodes on the retention performances of HfOx RRAM devices. Motivated by our experimental data, we employ physics-based RRAM modeling and… (More)