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—The dynamic characteristics, and in particular the modulation bandwidth, of high-speed semiconductor lasers are determined by intrinsic factors and extrinsic parameters. In particular, carrier transport through the heterostructure and thermalization, or quantum capture in the gain region, tend to play an important role. We have made a detailed study of(More)
We report growth of self-organized In0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature ~17 K! photoluminescence spectra show that the optical properties of In0.4Ga0.6As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6As quantum-dot(More)
— Fabrication and characterization of monolithically integrated SiGe–Si PIN–HBT transimpedance photoreceivers are reported. SiGe–Si technology has been developed leading to SiGe–Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at = 850 nm and bandwidth of 450 MHz. SiGe–Si HBT transimpedance amplifiers showed(More)
  • O. Qasaimeh, K. Kamath, P. Bhattacharya, J. Phillips
  • 1998
The electro-optic properties of self-organized In0.4Ga0.6As/GaAs quantum dots have been studied experimentally. Single-mode ridge waveguide structures were grown by molecular beam epitaxy with self-organized In0.4Ga0.6As/GaAs quantum dots in the guiding region. The measured linear and quadratic electro-optic coefficients are 2.58310 m/V and 6.25310 m/V,(More)
Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 mm and additional(More)
Solid-state light-emitting devices with the capability of electrically controlled wavelength switching may become important for read and write operations, chip-to-chip interconnects, and wavelength-division multiplexing. There have been extensive studies of optical bistability in semiconductor lasers with intracavity saturable absorbers. Such devices have(More)
  • O. Qasaimeh, W.-D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya, M. Dutta
  • 1999
Self-organized In0.4Ga0.6As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light–current characteristics of 3 mm single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6(More)
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