Omar Qasaimeh

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The dynamic characteristics, and in particular the modulation bandwidth, of high-speed semiconductor lasers are determined by intrinsic factors and extrinsic parameters. In particular, carrier transport through the heterostructure and thermalization, or quantum capture in the gain region, tend to play an important role. We have made a detailed study of(More)
A low-power GaAs-based monolithically integrated phototransceiver, consisting of a high-gain heterojunction phototransistor (HPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor(More)
Fabrication and characterization of monolithically integrated SiGe–Si PIN–HBT transimpedance photoreceivers are reported. SiGe–Si technology has been developed leading to SiGe–Si HBT’s with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at = 850 nm and bandwidth of 450 MHz. SiGe–Si HBT transimpedance amplifiers showed(More)
Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 mm and additional(More)
We have investigated the properties of InP-based microcavity light-emitting diodes ( = 1 6 m). Our objective was mainly to study the effects of lateral confinement of optical modes, which was achieved by the wet oxidation of double In0 52Al0 48As layers. The smallest devices had a cavity radius of 0.5 m, which becomes comparable to where is the effective(More)
Self-organized In0.4Ga0.6As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light–current characteristics of 3 mm single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6(More)
Solid-state light-emitting devices with the capability of electrically controlled wavelength switching may become important for read and write operations, chip-to-chip interconnects, and wavelength-division multiplexing. There have been extensive studies of optical bistability in semiconductor lasers with intracavity saturable absorbers. Such devices have(More)