Olivier Gagliano

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This paper presents measurements of pulsed photoelectrical laser stimulation of a PMOS transistor in 90 nm technology. The laser power was able to trig three PNP parasitic bipolar transistors Drain/Nwell/Source, Drain/Nwell/Psubstrate and Source/Nwell/Psubstrate. An electrical model is proposed in order to simulate effects induced by the laser. Results(More)
improvement of an SRAM cell against laser-induced fault injection. HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive(More)
This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex(More)
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