Olivier Gagliano

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This paper presents measurements of pulsed photoelectrical laser stimulation of a PMOS transistor in 90 nm technology. The laser power was able to trig three PNP parasitic bipolar transistors Drain/Nwell/Source, Drain/Nwell/Psubstrate and Source/Nwell/Psubstrate. An electrical model is proposed in order to simulate effects induced by the laser. Results(More)
This paper presents the design of an SRAM cell with a robustness improvement against laser-induced fault injection. We report the fault sensitivity mapping of a first SRAM design. A careful analysis of its results combined with the use of an electrical model at transistor level of the photoelectric effect induced by a laser permit us to validate our(More)
This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex(More)
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