Olivier Debieu

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We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in(More)
The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the(More)
Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters(More)
In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering(More)
Nd-doped Si-rich silicon oxide thin films were produced by radio frequency magnetron co-sputtering of three confocal cathodes: Si, SiO2, and Nd2O3, in pure argon plasma at 500oC. The microstructure and optical properties of the films were investigated versus silicon excess and post-deposition annealing treatment by means of ellipsometry and Fourier(More)
We examine the electrical properties of MIS devices made of Al/Si nanocrystal–SiOxNy/p-Si. The J–V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission(More)
<lb>The combination of third generation solar cell concepts in second generation thin film materials has<lb>been identified as an efficient way to solve the global energy needs. The quantum confinement effects<lb>observed from Si nanostructures are promising towards integration in a third generation solar cell such<lb>as an ‘All-Si tandem cell’. This thesis(More)
We examine the electrical properties of MIS devices made of Al/Si nanocrystal–SiOxNy/p-Si. The J–V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission(More)
Planar waveguides made of Nd 3+ -doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on(More)