Ole M. L⊘vvik

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Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 &#x00B0;C) using multiple energies (100 to 575 keV) with a total dose of 1.3&#x00D7;10<sup>17</sup> atoms/cm<sup>2</sup> in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 &#x00B0;C for 60 min. An anomalous area in the center was(More)
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