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Optical modulator on silicon employing germanium quantum wells.
We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrastExpand
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  • Open Access
C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
Introduction: Development of photonics based on CMOS-compatible materials and processing may lead to inexpensive optoelectronic components and monolithic integration of photonics and electronics forExpand
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  • Open Access
Ge–SiGe Quantum-Well Waveguide Photodetectors on Silicon for the Near-Infrared
We demonstrate near-infrared waveguide photodetectors using Ge-SiGe quantum wells epitaxially grown on a silicon substrate. The diodes exhibit a low dark current of 17.9 mA/cm2 at 5-V reverse bias.Expand
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  • Open Access
Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting.
We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoreticallyExpand
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  • Open Access
Lattice-matched multijunction solar cells employing a 1 eV GaInNAsSb bottom cell
Abstract. Over the past 15 years, tremendous effort has been put forth into increasing the efficiency of multijunction solar cells used in concentrator photovoltaics (CPV) systems. Because the cellExpand
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High efficiency micro solar cells integrated with lens array
We demonstrate high efficiency triple junction solar cells with submillimeter dimensions in an all-back-contact architecture. 550 × 550 μm2 cells flash at 41.3% efficiency under the air mass 1.5Expand
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High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board
We have developed a compact concentrator photovoltaic (CPV) module that comprises micro-solar cells with an area of ≈0.6 × 0.6 mm2 sandwiched between a 20-mm-thick lens array and a 1-mm-thick circuitExpand
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Material Properties of Si-Ge/Ge Quantum Wells
Germanium (Ge) and silicon-germanium (Si-Ge) have the potential to integrate optics with Si IC technology. The quantum-confined Stark effect, a strong electroabsorption mechanism often observed inExpand
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  • Open Access
Multifunctional integrated photonic switches
Traditional optical-electronic-optical (o-e-o) conversion in today's optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electricalExpand
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  • Open Access
Optically controlled electroabsorption modulators for unconstrained wavelength conversion
We introduce a proof-of-concept, optically controlled, optical switch based on the monolithic integration of a surface-illuminated photodetector and a waveguide electroabsorption modulator. WeExpand
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  • Open Access