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AVD® technology for deposition of next generation devices

• U. Weber, M. Schumacher, +7 authors T. McEntee
• Microelectronics Reliability
• 2005

Work-function engineering in gate first technology for multi-V<inf>T</inf> dual-gate FDSOI CMOS on UTBOX

• Ofir Weber, Françoise Gay - Andrieu, +30 authors Olivier Faynot
• 2010 International Electron Devices Meeting
• 2010

For the first time, we demonstrate low-V<inf>T</inf> (V<inf>Tlin</inf> &#x00B1;0.32V) nMOS and pMOS adjusted in a gate first FDSOI technology by work-function engineering of TiN/TaAlN metal gates.… (More)

Atomic Vapor Deposition (AVD®) for High-k Dielectric and Ferroelectric films

• V. Vezin, Chiaki Isobe, +4 authors J. Lindner
• 2007 Sixteenth IEEE International Symposium on…
• 2007

The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random… (More)

Colloque étudiant 2012 8 th / 8 e Student symposium Colloque étudiant Hosted by / Tenu à : Université de Sherbrooke 18 Sept . 2012 Centre Culturel

• Amir Sheikhi, Feng Qi, +16 authors Olga Borozenko
• 2012

Ultrasound-responsive block copolymer micelles based on a new amplification mechanism.

• Juan Xuan, O. Boissière, +5 authors Yue Zhao
• Langmuir : the ACS journal of surfaces and…
• 2012

A new approach for amplifying the effect of high-intensity focused ultrasound (HIFU) in disassembling amphiphilic block copolymer (BCP) micelles in aqueous solution was investigated. The diblock… (More)

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