Learn More
The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the(More)
This paper focuses on CMOS technologies for mobile applications having integrated high voltage devices to address analog baseband and RF power applications. Technology evolution from BCD-like to advanced CMOS technologies on bulk and thin SOI substrates and some selected device architectures (extended drain MOSFET, drift MOSFET, lateral and vertical(More)
This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization,(More)
This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al/sub 2/O/sub 3/ as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al/sub(More)
  • 1