O. Cobianu

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This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from pand n-type doping of polysilicon used as the gate electrodes. Solving Poisson’s equation with boundary conditions based(More)
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