Nurlan Almasov

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The absence of deep traps for electrons in the spectrum of As40Se30S30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As40Se30S30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal(More)
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