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Unified characterization of RTN and BTI for circuit performance and variability simulation

• Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
• ESSDERC
• 2012

RELAB: A tool to include MOSFETs BTI and variability in SPICE simulators

• J. Martin-Martinez, N. Ayala, R. Rodriguez, M. Nafria, X. Aymerich
• 2012 International Conference on Synthesis…
• 2012

RELAB is a new simulation tool for circuit reliability evaluation, based on the physical models of different degradation phenomena. In this work, the RELAB capabilities to include Bias Temperature Instability (BTI) and its variability in SPICE simulators is presented.

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

• Nuria Ayala, Javier Martín-Martínez, +4 authors Eddy Simoen
• Microelectronics Reliability
• 2012

Bias Temperature Instability: Characterization, modeling and circuit aging evaluation

• J. Martin-Martinez, N. Ayala, R. Rodriguez, M. Nafria, X. Aymerich
• 2012 IEEE 11th International Conference on Solid…
• 2012

In small devices, Bias Temperature Instability (BTI) produces discrete threshold voltage (V_T) shifts, which are attributed to the charge and discharge of individual defects. Among others, the Probabilistic Defect Occupancy (PDO) model describes the BTI degradation of the device from these phenomena at atomic level. Since BTI related VT shifts… (More)

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