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RELAB is a new simulation tool for circuit reliability evaluation, based on the physical models of different degradation phenomena. In this work, the RELAB capabilities to include Bias Temperature Instability (BTI) and its variability in SPICE simulators is presented.
In small devices, Bias Temperature Instability (BTI) produces discrete threshold voltage (V<sub>T</sub>) shifts, which are attributed to the charge and discharge of individual defects. Among others, the Probabilistic Defect Occupancy (PDO) model describes the BTI degradation of the device from these phenomena at atomic level. Since BTI related VT shifts… (More)