Nur Nadhirah Mohamad Rashid

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress(More)
  • 1