Norbert Galster

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The advantages of the technology of embedding actives and passives led to numerous R&D activities in recent years. Improved reliability [1], better heat management [6], the potential for further miniaturization, and the improved electrical performance by direct contacting the chips through micro vias [2] are some of the main drivers for a rapidly(More)
In 1992 International Rectifier Corp. introduced the first commercially available diode based on this concept [3]. The superior properties of those devices have been improved further by means of axial lifetime engineering [4-7]. The final result is an IGBT companion diode with low forward voltage drop, a positive temperature coefficient, soft reverse(More)
The crossing point current of forward I-V curves (IXing) at 25 and 125 C was measured and simulated for 4.5kV/320A silicon power P-i-N diode irradiated by electron, proton and combined electron-proton irradiation. The proton and electron irradiation are shown eto decrease the magnitude of IXing which is beneficial for paralleling of diodes under surge(More)
Reverse recovery of a P-i-N power diode at high dI/dt is subject to two detrimental effects, i.e. avalanche injection and snap-off. Both the effects can be reduced by a proper application of lifetime engineering. For this purpose, combined proton and electron irradiation was found to be the method of choice. For exact design of irradiation parameters, the(More)
This paper presents the comparison of two 4.5kV diodes with expanded Safe Operating Area (SOA) in terms of an expansion to higher line voltages. In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced. To control the injection efficiency of the anode two state of the(More)
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