The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to /spl sim/150 fF. 3 kV HBM and 750 V CDM are achieved in a LNA working at 2.5 GHz with NF<4dB, applicable for Bluetooth wireless transceiver.
A novel linearization technique which improves the phase distortion and gain compression of a power amplifier is proposed in this paper. Moreover, a low distortion and high efficiency AlGaAs/GaAs HBT MMIC power amplifier for the 1.9 GHz PHS system has been demonstrated using the novel linearization technique. The HBT MMIC power amplifier exhibits an output… (More)