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This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO x-2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t OXE) and low gate leakage (J G) and (ii) effective carrier confinement and high(More)
Single molecule studies on membrane proteins embedded in their native environment are hampered by the intrinsic difficulty of immobilizing elastic and sensitive biological membranes without interfering with protein activity. Here, we present hydrogels composed of nano-scaled fibers as a generally applicable tool to immobilize biological membrane vesicles of(More)
Membrane proteins are prime drug targets as they control the transit of information, ions, and solutes across membranes. Here, we present a membrane-on-nanopore platform to analyze nonelectrogenic channels and transporters that are typically not accessible by electrophysiological methods in a multiplexed manner. The silicon chip contains 250,000 femtoliter(More)
This work summarizes the advantages and challenges of III-V channel transistors for high performance and low power logic applications with respect to Si CMOS. The challenge of heterogeneous integration of III-V on Si is addressed by integration of In0.7Ga0.3As QWFETs on Si substrates with a total composite buffer thickness successfully scaled down to 1.3um.(More)
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