Nobi Fuchigami

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After being forgotten for a number of years, Ti has recently re-gained attention for use in Cu barrier applications. For advanced logic products utilizing porous ultra low-k (ULK) dielectric, the main motivation of using a Ti-based barrier is that compared with a Ta-based barrier, the Ti-based barrier is more compatible with porous ULK due to its better(More)
1. Introduction In order to realize highly intelligent information processing systems which can recognize various objects in real-time/real-world, we have been proposed a concept of multi-object recognition system based on 3D custom stack system (3DCSS) presented in the 21st century COE of Hiroshima University [1]. Recently, we have developed a real time(More)
Drastic reduction in nickel oxide (NiOx) film resistivity and ionization potential is observed when subjected to ultraviolet (UV)/ozone (O3) treatment. X-ray photoemission spectroscopy suggests that UV/O3 treatment changes the film stoichiometry by introducing Ni vacancy defects. Oxygen-rich NiOx having Ni vacancy defects behaves as a p-type semiconductor.(More)
Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiO<sub>x</sub> insulator. For Ti-TiO<sub>x</sub>-n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiO<sub>x</sub> into Ti during thermal anneals, as observed from XPS depth profiles. A thin AlO<sub>x</sub>(More)
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