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Gain-cell embedded DRAM (GC-eDRAM) is an interesting alternative to SRAM for reasons such as high density, low bitcell leakage, logic compatibility, and suitability for 2-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array, which degrade energy-efficiency due to refresh(More)
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