Two simple but effective methods are proposed for determining from simulation tests using SPICE parameter data, the incremental collector-base resistance, r/sub /spl mu//, of the hybrid-/spl pi/ model of bipolar junction transistor (B.J.T.), operating under specified d.c. conditions, from its SPICE parameter set.
— A new technique is proposed in this paper in order to design a current source in bipolar technology with very high output resistance while minimising output capacitance. Such techniques are useful in Electrical Impedance Tomography applications. First of all, D.C. relationships are established. Then, an expression based on the analysis of a simplified… (More)