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Stitched, large area, complementary metal–oxide–semiconductor (CMOS), active pixel sensors (APS) show promise for x-ray imaging applications. In this paper we present an investigation of the effects of stitching on uniformity of sensor response for an experimental APS. The sensor, known as LAS (large area sensor), was made by reticular stitching onto a(More)
The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or(More)
With the increased brilliance of state-of-the-art synchrotron radiation sources and the advent of free-electron lasers (FELs) enabling revolutionary science with EUV to X-ray photons comes an urgent need for suitable photon imaging detectors. Requirements include high frame rates, very large dynamic range, single-photon sensitivity with low probability of(More)
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