Learn More
—One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights(More)
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. ABSTRACT This paper describes a real-time terahertz (THz) imaging system,(More)
This conference will consider existing and new sensing methods as well as recent advances in new nano-materials and devices. Its objective is to bring together experimentalists, theorists, computational specialists, and development engineers to provide an interdisciplinary forum to discuss physical understanding and state-of-the-art of active and passive(More)
We report a simple sonochemical method for the seeding and synthesis of Zinc Oxide nanowire arrays that can be formed on a number of substrates that are stable in alcohol and aqueous solution. Vertically aligned ZnO NWs were synthesized from a single solution at room-ambient via ultrasonic excitation. Prior to the NW growth, a ZnO seed layer was deposited(More)
Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV (at L point) and a direct bandgap of 0.8eV [1]. When strain is applied, the band structure of germanium will be altered. When the strain is tensile, both the indirect and the direct bandgaps tend to(More)
In recent times, atomically thin alloys of boron, nitrogen, and carbon have generated significant excitement as a composition-tunable two-dimensional (2D) material that demonstrates rich physics as well as application potentials. The possibility of tunably incorporating oxygen, a group VI element, into the honeycomb sp(2)-type 2D-BNC lattice is an(More)
Germanium is a group IV semiconductor commonly used in Short Wave Infrared (SWIR) optical devices due to its relatively small band gap of 0.66eV. Like silicon in the period above it, the conduction band minimum of germanium does not lie at the same point in k space as the valence band maximum, making it an indirect-gap material and thus reducing its(More)
The performance of a long-wave infrared type-II InAs/GaSb superlattice photodetector with a 50% cutoff wavelength of approximately 8.7 μm is presented. The ability to lower dark current densities over traditional P-type-Intrinsic-N-type diodes is offered by way of hetero-structure engineering of a pBiBn structure utilizing superlattice p-type (p) and n-type(More)