Nianduan Lu

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High density 3-dimensional (3D) crossbar resistive random access memory (RRAM) is one of the major focus of the new age technologies. To compete with the ultra-high density NAND and NOR memories, understanding of reliability mechanisms and scaling potential of 3D RRAM crossbar array is needed. Thermal crosstalk is one of the most critical effects that(More)
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in(More)
Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an(More)
The preparation and characterization of pure rare-earth-metal bulks with controllable nanostructures are reported in this paper. A novel 'oxygen-free' in situ synthesis technique that combines inert-gas condensation with spark plasma sintering (SPS) technology is proposed. Taking into account the special mechanisms of SPS consolidation and the scale effects(More)
Technology of thin film transistors based on organic semiconductor (OTFTs) materials had gained great progress in recent years. A technology computer aided design (TCAD) model is needed to further investigate the devices physics and shortcut the fabrication process. In this article, based on hopping transport mechanism, we proposed a physical model for(More)
The single-phase ultrafine nanocrystalline SmCo(3) compound with a high coercivity of 33 kOe and a Curie temperature of 925 K was prepared using a simple and efficient method, which took advantages of the concurrent processes of nanocrystallization and densification during spark plasma sintering. The crystal structure of the nanocrystalline SmCo(3) compound(More)
Resistive switching mechanism is an ongoing topic in resistive random access memory (RRAM) communities. In this work, a physical model including vacancy generation, drift/diffusion mechanisms is developed to characterize the forming process in valence change resistive switching memories (VCM). This model addresses the intrinsic nature of forming time(More)
We, the named authors, hereby wholly retract this Nanoscale article. The article reports high uniformity and an improvement in nonlinearity by embedding nanocrystals in selector-less resistive random access memory. Upon repeating the experiments, we found that the results reported were not reproducible and the improvement upon reported values in the(More)
By combining the inert-gas condensation with the SPS technology in an entirely closed system with the oxygen concentration below 0.5 ppm, the pure Dy bulk with the ultrafine nanocrystalline structure has been prepared. Thus a novel and efficient route of preparing nano rare-earth metals, as well as metallic nanomaterials that are highly reactive in the air,(More)