Learn More
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in(More)
High density 3-dimensional (3D) crossbar resistive random access memory (RRAM) is one of the major focus of the new age technologies. To compete with the ultra-high density NAND and NOR memories, understanding of reliability mechanisms and scaling potential of 3D RRAM crossbar array is needed. Thermal crosstalk is one of the most critical effects that(More)
Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an(More)
The preparation and characterization of pure rare-earth-metal bulks with controllable nanostructures are reported in this paper. A novel 'oxygen-free' in situ synthesis technique that combines inert-gas condensation with spark plasma sintering (SPS) technology is proposed. Taking into account the special mechanisms of SPS consolidation and the scale effects(More)
The characteristics of phase transformation in nanocrystalline alloys were studied both theoretically and experimentally from the viewpoint of thermodynamics. With a developed thermodynamic model, the dependence of phase stability and phase transformation tendency on the temperature and the nanograin size were calculated for the nanocrystalline Sm(2)Co(17)(More)
Based on three-dimensional (3D) Fourier heat flow equation and numerical simulation, we investigated thermal crosstalk of resistive switching memory in 3D crossbar structure for the first time. Our results show that the transient thermal effect will dominate reset process. With the decrease of RS device size, the thermal crosstalk would remarkably(More)
The single-phase ultrafine nanocrystalline SmCo(3) compound with a high coercivity of 33 kOe and a Curie temperature of 925 K was prepared using a simple and efficient method, which took advantages of the concurrent processes of nanocrystallization and densification during spark plasma sintering. The crystal structure of the nanocrystalline SmCo(3) compound(More)
Resistive switching mechanism is an ongoing topic in resistive random access memory (RRAM) communities. In this work, a physical model including vacancy generation, drift/diffusion mechanisms is developed to characterize the forming process in valence change resistive switching memories (VCM). This model addresses the intrinsic nature of forming time(More)
A novel route for the preparation of the single-phased Sm2Co17 nanocrystalline bulk with ultrafine grain sizes was proposed. It was found that the nanocrystalline Sm20Co17 has a hexagonal crystal structure at the room temperature, which shows a different thermal stability from the conventional polycrystalline alloy. The intrinsic coercivity of the(More)