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Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in(More)
High density 3-dimensional (3D) crossbar resistive random access memory (RRAM) is one of the major focus of the new age technologies. To compete with the ultra-high density NAND and NOR memories, understanding of reliability mechanisms and scaling potential of 3D RRAM crossbar array is needed. Thermal crosstalk is one of the most critical effects that(More)
A physical and electro-thermal Compact model for thermal effect and crosstalk in 3D RRAM arrays has been firstly proposed. The simulation results show that the transient thermal effect will dominate reset process. The proposed model is based on 3D Fourier heat flow equation and electro-thermal analogy which can couple thermal network to its electrical(More)
Based on three-dimensional (3D) Fourier heat flow equation and numerical simulation, we investigated thermal crosstalk of resistive switching memory in 3D crossbar structure for the first time. Our results show that the transient thermal effect will dominate reset process. With the decrease of RS device size, the thermal crosstalk would remarkably(More)
Technology of thin film transistors based on organic semiconductor (OTFTs) materials had gained great progress in recent years. A technology computer aided design (TCAD) model is needed to further investigate the devices physics and shortcut the fabrication process. In this article, based on hopping transport mechanism, we proposed a physical model for(More)
Resistive switching mechanism is an ongoing topic in resistive random access memory (RRAM) communities. In this work, a physical model including vacancy generation, drift/diffusion mechanisms is developed to characterize the forming process in valence change resistive switching memories (VCM). This model addresses the intrinsic nature of forming time(More)
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