Nguyen Hoai-Son

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Ge SiGe/SOI PIN photodiodes with 15 - 17 GHz bandwidth at 1550 nm, external quantum efficiency of 20% - 27% 6 at 850 nm, and bulk dark current density of 1.5~2 mA/cm<sup>2</sup>, using low temperature Si<sub>0.8</sub>Ge<sub>0.2</sub> buffer and without cyclic annealing were demonstrated.
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