Ngoc Le Ba

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An 8-Kbit low power 8-T SRAM for high temperature (up to 300°C) applications is presented. Nearthreshold operation is selected for minimum performance variations over a wide temperate range. We proposed a PVTtracking bitline sensing margin enhancement technique to improve the bitline swing and the sensing window. Test chips fabricated in a commercial 1.0-μm(More)
This paper presents an 8-Kbit low-power SRAM for high-temperature (up to 300 °C) applications. For reliable low-voltage operation, we employed a decoupled 8T SRAM cell structure. To minimize the performance variations caused by the wide operating temperate range, supply voltage was selected in the near-threshold region. A temperature-aware bitline sensing(More)
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