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Transient trapping/detrapping of electrons at the Si͑100͒/SiO 2 outer surface is studied studied in vacuum or with an O 2 ambient ͑between 10 Ϫ3 and 30 Torr͒ following internal electron photoemission from Si. Photoemission-current ͑produced by a 150 fs, 800 nm laser source͒ and contact-potential-difference techniques were used to investigate a wide variety(More)
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