• Publications
  • Influence
Defects in single-crystal silicon induced by hydrogenation.
  • 179
  • 3
Analysis of the composite structures in diamond thin films by Raman spectroscopy.
Ces films ont des structures cristallines composites de types diamant amorphe/graphite. Les composantes de cette structures qui contribuent a la diffusion Raman sont etudiees en termes de rapport desExpand
  • 343
  • 2
Ultrafast recombination and trapping in amorphous silicon.
  • Esser, Seibert, +5 authors Nemanich
  • Physics, Medicine
  • Physical review. B, Condensed matter
  • 15 February 1990
Etude des variations de la reflectivite a resolution temporelle et de la transmission induites par des impulsions laser femtosecondes dans a-Si:H. Identification d'un processus de recombinaison nonExpand
  • 52
  • 1
Bond-length relaxation in Si1-xGex alloys.
We have measured and quantified the effect of alloy composition on the atomic bonding in relaxed molecular-beam-epitaxy-deposited crystalline Si[sub 1[minus][ital x]]Ge[sub [ital x]] alloys.Expand
  • 39
  • 1
Negative-electron-affinity effects on the diamond (100) surface.
  • 232
Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling.
  • 15
Surface electronic states of low-temperature H-plasma-exposed Ge(100).
  • Cho, Nemanich
  • Physics, Medicine
  • Physical review. B, Condensed matter
  • 15 November 1992
The surface of low-temperature H-plasma-cleaned Ge(100) was studied by angle-resolved UV-photoemission spectroscopy and low-energy electron diffraction (LEED). The surface was prepared by an ex situExpand
  • 7
Interface stability of Ti(SiGe)2 and SiGe alloys: Tie lines in the ternary equilibrium diagram.
The C54 phases of TiSi{sub 2} and TiGe{sub 2} are known to be completely miscible, however, we have observed that thin films of C54 Ti(Si{sub 1{minus}{ital y}}Ge{sub {ital y}}){sub 2} are not stableExpand
  • 26
Photoluminescence above the Tauc gap in a-Si:H.
Variation de la photoluminescence avec la temperature, l'intensite incidente, l'energie d'excitation, la concentration en defauts profonds. La photoluminescence observee au-dessus de ∼ 2 eV estExpand
  • 5