- Full text PDF available (2)
- This year (0)
- Last 5 years (1)
- Last 10 years (7)
Journals and Conferences
We design, fabricate and demonstrate 850 nm VCSEL and PD arrays which operate at 25 Gb/s per channel, up to 600 Gb/s with 24 channels, for low-power parallel optical module applications. We also report a complete 25 Gb/s VCSEL to PD back-to-back link.
We report a complete VCSEL optical link operating at 40-Gb/s (BER<;10<sup>-12</sup>) with an eye opening of 0.56 UI and 6 dB of link margin. Transmitter pre-distortion enables substantial improvements in speed, jitter, and link margin.
We present complete characterizations of multimode GaAs photodetectors for high-speed VCSEL-based optical links and compare SiGe receiver IC performances in a 62Gbps back-to-back link for different photodiode designs.
A full multicore fiber optic link is demonstrated, transmitting greater than 100 Gb/s through a single strand of multimode fiber for the first time. The fiber, which consists of seven graded-index multimode cores, is used to transmit up to 120 Gb/s over 100 m using a custom multicore-fiber interfacing transmitter and receiver. 2-D arrays of vertical-cavity… (More)
Over 100 Gb/s is carried across a single 100-m strand of multicore multimode fiber. A custom VCSEL array transmits 16.7 to 20 Gb/s/channel into six cores housed within a 125-µm cladding. Negligible crosstalk is observed.
Via and metal resistance, capacitance, stress migration lifetime, and high voltage leakage are characterized for Cu interconnects capped with either CoWP or CoWP + SiN. The CoWP is formed by a self-activated process using DMAB as a reducing agent, providing a very uniform CoWP film. Low via resistance and high stress migration lifetime are observed, even… (More)
A low-power CMOS-driven VCSEL-based link using a 2-tap feed-forward equalizer in the transmitter is reported at 850-nm wavelengths. Power efficiencies of 1.5, 2.0, and 3.8 pJ/b are achieved at 22.5, 25, and 28.5 Gb/s, respectively.
Quantum-dot (QD) lasers have been widely studied due to their attractive features of low-threshold current density, high gain, low chirp, and superior over-temperature performance. In this letter, index-coupled 1.3- μm distributed-feedback (DFB) lasers were fabricated using wafer-level interference lithography for grating patterning, molecular beam… (More)
Leakage and dielectric breakdown of SiO<sub>2</sub> are studied for Cu interconnect structures with either stand-alone CoWP or two-layer CoWP+SiN caps. Without a post-CoWP plasma clean, there are many early fails and the dielectric breakdown exhibits bimodal behavior. By adding a plasma clean after CoWP deposition, the early fails can be eliminated and high… (More)
We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar… (More)