Nedal Al Taradeh

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—In this paper, a new accurate and efficient model for subthreshold leakage current is proposed for nanoscale metal oxide semiconductor field effect transistor (MOSFET). The influence of drain induced barrier lowering (DIBL) and gate induced drain lowering (GIDL) due to short channel effect (SCE) on subthreshold leakage is modeled and included in the(More)
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