Nedal Al Taradeh

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Simple and accurate models for Gate leakage current (I<sub>g</sub>) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper. The accurate modeling for Oxide Electric field (E<sub>ox</sub>) and Oxide voltage (V<sub>ox</sub>) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for(More)
—In this paper, a new accurate and efficient model for subthreshold leakage current is proposed for nanoscale metal oxide semiconductor field effect transistor (MOSFET). The influence of drain induced barrier lowering (DIBL) and gate induced drain lowering (GIDL) due to short channel effect (SCE) on subthreshold leakage is modeled and included in the(More)
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