Neal R. Rueger

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A quartz crystal microbalance ~QCM! has been used for etching yield measurements in a low energy ion beam system. The goal is to obtain etching yields for ion energies below 150 eV for various ion chemistries and target materials. Typical beam currents are about 0.5 mA, and the mass change per unit time on the QCM is much smaller than that for typical QCM(More)
It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from(More)
For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick ~2–7 nm! fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were(More)
The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process of vital importance to modern integrated circuit fabrication technology, has been studied. Selective etching of SiO2-to-Si3N4 in various inductively coupled fluorocarbon plasmas (CHF3 , C2F6/C3F6 , and C3F6/H2) was performed, and the results compared to(More)
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a(More)
Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor ~ICP!. Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etch rate and selectivity behaviors for silicon dioxide, silicon, and passively deposited fluorocarbon films.(More)
The evolution of integrated circuits into the ultralarge scale integrated regime takes today’s 0.35 mm circuit design rules to even smaller values of 0.18 mm and beyond. As a consequence, photoresist masks are becoming thinner and even more prone to erosion by etching. For this work an I-line novolak resist was used. Etch rates for various process(More)
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