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Selective etching of SiO 2 over polycrystalline silicon has been studied using CHF 3 in an inductively coupled plasma reactor ͑ICP͒. Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etch rate and selectivity behaviors for silicon dioxide, silicon, and passively deposited fluorocarbon films.(More)
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