Nathan T. Woodward

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The ferromagnetic properties of erbium-doped GaN (GaN:Er) epilayers grown by metal-organic chemical vapor deposition were studied. It is found that the different tensile strains produced by the respective lattice mismatch for different substrates used (GaN/Al2O3, AlN/Al2O3, GaN/Si (111), and c-GaN bulk) correlate well with the observed room-temperature(More)
Using combined excitation–emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared them to samples grown by MBE. A smaller up-conversion efficiency for the main site is observed compared to minority sites in the same sample as well as versus all sites from MBE grown samples.(More)
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