Natalya A. Valisheva

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Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (R<inf>s</inf>) and the effective barrier height (&#x03D5;<inf>Bn</inf>), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following(More)
Composition and electrical characteristics of HfO<inf>2</inf>/Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO<inf>2</inf> ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO<inf>2</inf> on Si-passivated GaAs(001) surface leads to the formation of sharp HfO<inf>2</inf>/Si/GaAs interface without(More)
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