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  • Md. Shahjahan, Nariya Takahashi, Kazuaki Sawada, Makoto Ishida
  • Physics
  • 2002 (First Publication: 15 December 2002)
  • Fabrication of ultrathin crystalline Al2O3 (equivalent oxide thickness (EOT)=1.5–2 nm) on Si substrates by molecular beam epitaxy (MBE) and the electrical properties of these films were discussed. InContinue Reading