Naoto Kawano

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A novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO<sub>2</sub> gas is fabricated toward high power rectifying antenna (rectenna). The double NO<sub>2</sub> exposures are introduced to provide high concentration of 2-D hole gas at the diamond surface. Experimentally, our SBDs have shown to give good rectifier properties with(More)
Dual diode rectifier circuits with two diamond Schottky barrier diodes (SBDs) for a rectifying antenna (rectenna) were fabricated for RF to DC conversion. A feature of diamond SBD structures is double NO<sub>2</sub> hole doping layers in order to form low Ohmic contact resistance and increase concentration of two dimensional hole gas at diamond surface.(More)
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