Nandita DasGupta

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The power available at the output of solar arrays keeps changing with solar insolation and ambient temperature. Expensive and inefficient, the solar arrays must be operated at maximum power point (MPP) continuously for economic reasons. Of the numerous algorithms for this purpose, perturb and observe (P&O) is a standard. A derivative of gradient ascent(More)
In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also(More)
The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I<sub>G</sub>-V<sub>G</sub>) characteristics. The reverse bias gate current of AlInN/GaN HEMTs is decomposed into three distinct components, which are thermionic emission (TE), Poole-Frenkel (PF)(More)
In solar cells, the output power is maximized only at a specific output voltage. This output power and the corresponding operating voltage is also affected by solar irradiation and ambient temperature leading to continual variation in total power available at the output of the solar cells. Considering high installation costs, it is required to track this(More)
Maximum power point trackers (MPPTs) are used to ensure optimal utilization of solar cells. The implementation essentially involves sensing input current and voltage. An MPPT algorithm uses this information to maximize power drawn from the solar cells. Understandably, such realization is costly. Current state of the art allows replacing one of the sensors(More)
The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation(More)
A physics-based compact model for silicon-on-insulator lateral double-diffused metal-oxide-semiconductor transistors including impact ionization, subsequent snapback (SB), and self-heating (SH) is presented. It is observed that the SB effect is caused by the turn-on of the associated parasitic bipolar transistor. The model includes the effect of device SH(More)
An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (p/sub s//sup H/) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of p/sub s//sup H/ and the hole concentration at the Si/SiO/sub 2/ interface (p/sub(More)
Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In this paper we investigate the impact of channel engineering on double gate MOSFET by using different channel doping. Sentaurus TCAD simulator is used to analyze the channel engineering of double gate MOSFET. It is observed in the results that we can change the(More)
An analytical threshold voltage model developed for a nonuniformly doped channel is used to study the random dopant fluctuation (RDF) effects in FD-SOI MOSFETs. RDF results in nonuniform doping in the channel, leading to deviation in the threshold voltage, which can be computed using this analytical model. The effect of device parameters on RDF-induced(More)